Browsing by author "Afanasiev, Valeri"
Now showing items 1-20 of 163
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6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Padovani, Andrea; Kaczer, Ben; Pesic, Milan; Belmonte, Attilio; Popovici, Mihaela Ioana; Nyns, Laura; Linten, Dimitri; Afanasiev, Valeri; Shlyakhov, Ilya; Lee, Younggon; Park, Hokyung; Larcher, Luca (2019) -
A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs
Chen, Zhuo; Ronchi, Nicolo; Tang, Hongwei; Walke, Amey; Izmailov, Roman; Popovici, Mihaela Ioana; van den Bosch, Geert; Rosmeulen, Maarten; Afanasiev, Valeri; Van Houdt, Jan (2024) -
Advanced ultralow-k organosilicate glasses: NEXAFS study
Konashuk, A.; Filatova, E.; Afanasiev, Valeri; Krishtab, Mikhail; Redzheb, Murad; Baklanov, Mikhaïl (2015) -
Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (W2W) stacking technology
Peng, Lan; Kim, Soon-Wook; Iacovo, Serena; Inoue, Fumihiro; Phommahaxay, Alain; Sleeckx, Erik; De Vos, Joeri; Zinner, Dominik; Thomas, Wagenleitner; Thomas, Uhrmann; Markus, Wimplinger; Ben, Schoenaers; Andre, Stesmans; Afanasiev, Valeri; Miller, Andy; Beyer, Gerald; Beyne, Eric (2018) -
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces
Houssa, Michel; van den Broek, Bas; Scalise, Emilio; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2013) -
Application of soft X-ray reflectometry for analysis of underlayer influence on structure of atomic-layer deposited SrTixOy films
Filatova, E.O.; Kozhevnikov, I.V.; Sokolov, A.A.; Konashuk, A.S.; Schaefers, F.; Popovici, Mihaela Ioana; Afanasiev, Valeri (2014) -
Atomic and electrical characterisation of amorphous silicon passivation layers
O'Sullivan, Barry; Thoan, N.H.; Jivanescu, M.; Pantisano, Luigi; Bearda, Twan; Dross, Frederic; Gordon, Ivan; Afanasiev, Valeri; Stesmans, Andre; Poortmans, Jef (2012) -
Atomic layer deposited Gd-doped HfO2 thin films: from high-k dielectrics to ferroelectrics
Adelmann, Christoph; Ragnarsson, Lars-Ake; Moussa, Alain; Woicik, Joseph; Mueller, Stefan; Schoeder, Uwe; Afanasiev, Valeri; Van Elshocht, Sven (2012) -
Atomic layer deposition of GdAlOx and GdHfOx using Gd(iPr-Cp)3
Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Kesters, Jurgen; Richard, Olivier; Conard, Thierry; Franquet, Alexis; Tielens, Hilde; Afanasiev, Valeri; Schaekers, Marc; Van Elshocht, Sven (2009) -
Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications
Clima, Sergiu; Govoreanu, Bogdan; Opsomer, Karl; Velea, Alin; Avasarala, Naga Sruti; Devulder, Wouter; Shlyakhov, I.; Donadio, Gabriele Luca; Witters, Thomas; Kundu, Shreya; Goux, Ludovic; Afanasiev, Valeri; Kar, Gouri Sankar; Pourtois, Geoffrey (2017) -
Band alignment and electron traps in Y2O3 layers on (100) Si
Wang, Wan Chih; Badylevitch, M.; Afanasiev, Valeri; Stesmans, Andre; Adelmann, Christoph; Van Elshocht, Sven; Kittl, Jorge; Lukosius, M.; Walczyk, Ch.; Wenger, Ch. (2009) -
Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band alignment between (100)Si and complex rare earth/transition metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Heeg, T.; Schubert, J.; Jia, Y.; Schlom, D.G.; Lucovsky, G. (2004) -
Band alignment between (100)Si and complex rare-earth/transition metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Heeg,; Schubert,; Jia, Y.; Schlom, D.; Lucovsky, G. (2004) -
Band alignment between (100)Si and Hf-based complex metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study
Afanasiev, Valeri; Chou, H. C.; Stesmans, Andre; Merckling, Clement; Sun, Xiao (2011) -
Bandgap narrowing in low-k dielectrics
Guo, X; King, S; Xue, P; de Marneffe, Jean-Francois; Baklanov, Mikhaïl; Afanasiev, Valeri; Nishi, Y.; Shohet, J. (2015) -
Can silicon behave like graphene? A first-principles study
Houssa, Michel; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2010)