Browsing by author "Afanasiev, Valeri"
Now showing items 21-40 of 154
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Characterization of interface interactions between Graphene and Ruthenium
Achra, Swati; Wu, Xiangyu; Trepalin, Vadim; Nuytten, Thomas; Ludwig, Jonathan; Brems, Steven; Afanasiev, Valeri; Huyghebaert, Cedric; Soree, Bart; Asselberghs, Inge; Tokei, Zsolt (2020) -
Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
Afanasiev, Valeri; Chou, H.Y.; Thoan, N.H.; Adelmann, Christoph; Lin, Dennis; Houssa, Michel; Stesmans, Andre (2012) -
Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Menou, Nicolas; Popovici, Mihaela Ioana; Clima, Sergiu; Opsomer, Karl; Polspoel, Wouter; Kaczer, Ben; Rampelberg, Geert; Tomida, Kazuyuki; Pawlak, Malgorzata; Detavernier, Christophe; Pierreux, Dieter; Swerts, Johan; Maes, Jan Willem; Manger, Dirk; Badylevich, M; Afanasiev, Valeri; Conard, Thierry; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Pourtois, Geoffrey; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2009) -
Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers
Manger, Dirk; Kaczer, Ben; Menou, Nicolas; Clima, Sergiu; Wouters, Dirk; Afanasiev, Valeri; Kittl, Jorge (2009) -
Considerations for further scaling of metal–insulator–metal DRAM capacitors
Kaczer, Ben; Clima, Sergiu; Tomida, Kazuyuki; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Kim, Min-Soo; Swerts, Johan; Wang, W. C.; Afanasiev, Valeri; Verhulst, Anne; Pourtois, Geoffrey; Groeseneken, Guido; Jurczak, Gosia (2013) -
Contact resistivities at graphene/MoS2 lateral heterojunctions
Houssa, Michel; Iordanidou, K.; Dabral, Ashish; Lu, A.; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2018) -
Control of metal/oxide electron barriers in CB-RAM cells by low work-function liners
De Stefano, Francesca; Afanasiev, Valeri; Houssa, Michel; Stesmans, Andre; Opsomer, Karl; Jurczak, Gosia; Goux, Ludovic (2013) -
Controlled sulfurization process for the synthesis of large area MoS2 films and MoS2-WS2 heterostructures
Chiappe, Daniele; Asselberghs, Inge; Sutar, Surajit; Iacovo, Serena; Afanasiev, Valeri; Stesmans, Andre; Balaji, Yashwanth; Peters, Lisanne; Heyne, Markus; Mannarino, Manuel; Vandervorst, Wilfried; Sayan, Safak; Huyghebaert, Cedric; Caymax, Matty; Heyns, Marc; De Gendt, Stefan; Radu, Iuliana; Thean, Aaron (2016) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Defect generation in ultrathin SiON/ZrO2 gate dielectric stacks
Houssa, M.; Autran, J.L.; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc (2002) -
Defect localization in 3-D TSV structures by differential light-induced capacitance alteration
Jacobs, Kristof J.P.; Stucchi, Michele; Afanasiev, Valeri; Gonzalez, Mario; Croes, Kristof; De Wolf, Ingrid; Beyne, Eric (2018) -
Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy
Jacobs, Kristof J.P.; Stucchi, Michele; Afanasiev, Valeri; Gonzalez, Mario; Croes, Kristof; De Wolf, Ingrid; Beyne, Eric (2018) -
Defect-induced bandgap narrowing in low-k dielectrics
Guo, X; Zheng, H; King, S; Afanasiev, Valeri; Baklanov, Mikhaïl; de Marneffe, Jean-Francois; Nishi, Y.; Shohet, J. (2015) -
Effect of binder content in Cu-In-Se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells
Buffiere, Marie; Zaghi, A.E.; Lenaers, Nick; Batuk, M.; Khelifi, S.; Dijkoningen, J.; Hamon, J.; Stesmans, Andre; Kepa, J.; Afanasiev, Valeri; Hadermann, J.; D'Haen, Jan; Manca, Jean; Vleugels, J.; Meuris, Marc; Poortmans, Jef (2014) -
Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO2
Kolomiiets, Nadiia; Afanasiev, Valeri; Madia, Oreste; Cott, Daire; Collaert, Nadine; Thean, Aaron; Stesmans, Andre (2016) -
Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
Houssa, Michel; De Jaeger, Brice; Delabie, Annelies; Van Elshocht, Sven; Afanasiev, Valeri; Autran, J.L.; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2004) -
Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
Houssa, Michel; De Jaeger, Brice; Delabie, Annelies; Van Elshocht, Sven; Afanasiev, Valeri; Autran, J.L.; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2005) -
Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3
Afanasiev, Valeri; Chou, H.-Y.; Stesmans, Andre; Merckling, Clement; Sun, Xiao (2011) -
Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks
Afanasiev, Valeri; De Stefano, Francesca; Houssa, Michel; Stesmans, Andre; Goux, Ludovic; Opsomer, Karl; Kittl, Jorge; Jurczak, Gosia (2013) -
Electron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO
Afanasiev, Valeri; Shamuilia, Sheron; dimoulas, A.; Stesmans, Andre; Houssa, Michel (2005)