Browsing by author "Mertens, Sofie"
Now showing items 1-20 of 104
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A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility
Tomczak, Yoann; Lin, Tsann; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Sankaran, Kiroubanand; Pourtois, Geoffrey; Tsvetanova, Diana; Souriau, Laurent; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Advanced cleaning strategies for ultra-clean silicon surfaces
Heyns, Marc; Bearda, Twan; Cornelissen, Ingrid; De Gendt, Stefan; Loewenstein, Lee; Mertens, Paul; Mertens, Sofie; Meuris, Marc; Schaekers, Marc; Teerlinck, Ivo; Vos, Rita; Wolke, K. (1999) -
Annealing stability of magnetic tunnel junctions no dual MgO free layers and Co/Ni based synthetic antiferromagnetic reference system
Devolder, Thibaut; Couet, Sebastien; Swerts, Johan; Liu, Enlong; Lin, Tsann; Mertens, Sofie; Kar, Gouri Sankar; Furnemont, Arnaud (2017) -
BEOL compatible top pinned magnetic tunnel junctions with a synthetic ferromagnetic pinning layer design
Swerts, Johan; Liu, Enlong; Couet, Sebastien; Mertens, Sofie; Carpenter, Robert; Kim, Woojin; Rao, Siddharth; Garello, Kevin; Van Elshocht, Sven; Kar, Gouri Sankar (2018) -
BEOLC compatiblehigh tunnel magneto resistance perpendicula magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Tomczak, Yoann; Sankaran, Kiroubanand; Pourtois, Geoffrey; Kim, Woojin; Meersschaut, Johan; Souriau, Laurent; Radisic, Dunja; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2015) -
Bulk FinFET Fin height control using Gas Cluster Ion Beam (GCIB) - Location Specific Processing (LSP)
Kim, Min-Soo; Ritzenthaler, Romain; Everaert, Jean-Luc; Fernandez, Luis; Devriendt, Katia; Lee, Jae Woo; Redolfi, Augusto; Mertens, Sofie; Burke, Ed; Horiguchi, Naoto; Thean, Aaron (2013) -
Buried power rail integration with FinFETs for ultimate CMOS scaling
Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node
Gupta, Anshul; Mertens, Hans; Tao, Zheng; Demuynck, Steven; Boemmels, Juergen; Arutchelvan, Goutham; Devriendt, Katia; Varela Pedreira, Olalla; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Zahedmanesh, Houman; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, N.; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Yakimets, Dmitry; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Cousserier, Joris; Jaysankar, Manoj; Lazzarino, Frederic; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications
Ortolland, Claude; Mathew, Suraj; Duffy, Ray; Saino, Kanta; Kim, Chul Sung; Mertens, Sofie; Horiguchi, Naoto; Vrancken, Christa; Chiarella, Thomas; Kerner, Christoph; Absil, Philippe; Lauwers, Anne; Biesemans, Serge; Hoffmann, Thomas Y. (2009) -
Challenges in scaling of CMOS devices towards 65nm node
Jurczak, Gosia; Veloso, Anabela; Rooyackers, Rita; Augendre, Emmanuel; Mertens, Sofie; Rothschild, Aude; Schaekers, Marc; Lindsay, Richard; Lauwers, Anne; Henson, Kirklen; Severi, Simone; Pollentier, Ivan; De Keersgieter, An (2003-06) -
CMP process steps for the fabrication of spin-transfer torque magnetic random access memory
Tsvetanova, Diana; Heylen, Nancy; Teugels, Lieve; Crotti, Davide; Donadio, Gabriele Luca; Kar, Gouri Sankar; Struyf, Herbert; Souriau, Laurent; Mertens, Sofie; Swerts, Johan; Couet, Sebastien; Lin, Tsann; Paraschiv, Vasile; Kim, Woojin; Rao, Siddharth (2016) -
Co/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application
Kar, Gouri Sankar; Kim, Woojin; Tahmasebi, Taiebeh; Swerts, Johan; Mertens, Sofie; Heylen, Nancy; Min, Tai (2014) -
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
Liu, Enlong; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Tomczak, Yoann; Lin, Tsann; Spampinato, Valentina; Franquet, Alexis; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; De Boeck, Jo (2016) -
Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy
Liu, Enlong; Swerts, Johan; Vaysset, Adrien; Devolder, Thibaut; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Van Elshocht, Sven; De Boeck, Jo; Kar, Gouri Sankar (2017) -
Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy
Liu, Enlong; Vaysset, Adrien; Swerts, Johan; Devolder, Thibaut; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Van Elshocht, Sven; De Boeck, Jo; Kar, Gouri Sankar (2017) -
Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Lauwers, Anne; Veloso, Anabela; Chang, Shou-Zen; Yu, HongYu; Hoffmann, Thomas Y.; Kerner, Christoph; Demand, Marc; Rothschild, Aude; Niwa, Masaaki; Satoru, Ito; Mitshashi, Riichirou; Ameen, Mike; Whittemore, Graham; Pawlak, Malgorzata; Vrancken, Christa; Demeurisse, Caroline; Mertens, Sofie; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Kittl, Jorge (2008) -
Cryogenic cooling post MgO promoting the free layer coercivity and TMR in perpendicular bottom pinned Co/Ni STT-MRAM device stacks
Swerts, Johan; Mertens, Sofie; Couet, Sebastien; Lin, Tsann; Liu, Enlong; Rao, Siddharth; Kim, Woojin; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; Nishimura, Kazumasa; Okuyama, Hiroki; Seino, Takuya; Tsunekawa, Koji (2016) -
Cu2ZnSnSe4 solar cells from selenization of sputtered metal layers
Brammertz, Guy; Ren, Ray; Mertens, Sofie; Hendrickx, Jurgen; Marko, Hakim; Esmaeil Zaghi, Armin; Lenaers, Nick; Vleugels, Jef; Meuris, Marc; Poortmans, Jef (2012) -
Diffusion control in top-pinned STT-MRAM devices
Carpenter, Robert; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Rao, Siddharth; Kundu, Shreya; Kar, Gouri Sankar (2019) -
Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation
Kim, Woojin; Rao, Siddharth; Van Beek, Simon; Garello, Kevin; Couet, Sebastien; Swerts, Johan; Mertens, Sofie; Lin, Tsann; Souriau, Laurent; Kundu, Shreya; Tsvetanova, Diana; Donadio, Gabriele Luca; Yasin, Farrukh; Sakhare, Sushil; Furnemont, Arnaud; Kar, Gouri Sankar (2017)