Browsing by author "Chen, Yangyin"
Now showing items 1-20 of 64
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
Chen, Yangyin; Yu, Shimeng; Guan, Ximeng; Wong, H.S.Philip; Kittl, Jorge (2012) -
a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Govoreanu, Bogdan; Crotti, Davide; Subhechha, Subhali; Zhang, Leqi; Chen, Yangyin; Clima, Sergiu; Paraschiv, Vasile; Hody, Hubert; Adelmann, Christoph; Popovici, Mihaela Ioana; Richard, Olivier; Jurczak, Gosia (2015) -
Analysis of complementary RRAM switching
Wouters, Dirk; Zhang, Leqi; Fantini, Andrea; Degraeve, Robin; Goux, Ludovic; Chen, Yangyin; Govoreanu, Bogdan; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2012) -
Asymmetry and switching phenomenology in TiN\(Al2O3)\HfO2\Hf systems
Goux, Ludovic; Fantini, Andrea; Govoreanu, Bogdan; Kar, Gouri Sankar; Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Wouters, Dirk; Pourtois, Geoffrey; Jurczak, Gosia (2012-08) -
Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Chen, Yangyin; Govoreanu, Bogdan; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk; Groeseneken, Guido; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith (2012) -
Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni
Goux, Ludovic; Polspoel, Wouter; Lisoni, Judit; Chen, Yangyin; Pantisano, Luigi; Wang, Xin Peng; Vandervorst, Wilfried; Jurczak, Gosia; Wouters, Dirk (2010) -
De-process and physical characterization of HfO2 based resistive memory as studied by C-AFM
Celano, Umberto; Chen, Yangyin; Wouters, Dirk; Jurczak, Gosia; Vandervorst, Wilfried (2012) -
Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics
Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Jurczak, Gosia; Pourtois, Geoffrey (2015) -
Dynamic 'Hour Glass' model for SET and RESET in HfO2 RRAM
Degraeve, Robin; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Chen, Yangyin; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Pourtois, Geoffrey; Cosemans, Stefan; Kittl, Jorge; Groeseneken, Guido; Jurczak, Gosia; Altimime, Laith (2012) -
Effect of anodic interface layers on the unipolar switching of HfO2-based resistive RAM
Wang, Xin Peng; Chen, Yangyin; Pantisano, Luigi; Goux, Ludovic; Jurczak, Gosia; Groeseneken, Guido; Wouters, Dirk (2010) -
Electrical characterization of functional oxides for resistive random access memory (RRAM) application
Chen, Yangyin (2013-06) -
Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Chen, Yangyin; Groeseneken, Guido; Jurczak, Gosia (2015) -
Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Degraeve, Robin; Kar, Gouri Sankar; Fantini, Andrea; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications
Fantini, Andrea; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Adelmann, Christoph; Polimeni, Giuseppe; Chen, Yangyin; Komura, Masanori; Belmonte, Attilio; Wouters, Dirk; Jurczak, Gosia (2014) -
Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
Goux, Ludovic; Fantini, Andrea; Chen, Yangyin; Redolfi, Augusto; Degraeve, Robin; Jurczak, Gosia (2014) -
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Goux, Ludovic; Czarnecki, Piotr; Chen, Yangyin; Pantisano, Luigi; Wang, XinPeng; Degraeve, Robin; Govoreanu, Bogdan; Jurczak, Gosia; Wouters, Dirk; Altimime, Laith (2010) -
Extensive reliability investigation of a-VMCO nonfilamentary RRAM: relaxation, retention and key differences to filamentary switching
Subhechha, Subhali; Govoreanu, Bogdan; Chen, Yangyin; Clima, Sergiu; De Meyer, Kristin; Van Houdt, Jan; Jurczak, Gosia (2016) -
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Goux, Ludovic; Sankaran, Kiroubanand; Kar, Gouri Sankar; Jossart, Nico; Opsomer, Karl; Degraeve, Robin; Pourtois, Geoffrey; Rignanese, G.-M.; Detavernier, C.; Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2012) -
Filament observation in metal-oxide resistive switching devices
Celano, Umberto; Chen, Yangyin; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia; Vandervorst, Wilfried (2013)