Browsing by author "Jossart, Nico"
Now showing items 1-20 of 32
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node
Redolfi, Augusto; Goux, Ludovic; Jossart, Nico; Yamashita, Fumiko; Nishimura, Eiichi; Urayama, Daisuke; Fujimoto, Kiwamu; Witters, Thomas; Lazzarino, Frederic; Jurczak, Gosia (2015) -
A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications
Rao, Siddharth; Couet, Sebastien; Van Beek, Simon; Kundu, Shreya; Houshmand Sharifi, Shamin; Jossart, Nico; Kar, Gouri Sankar (2021) -
C2H4-based plasma-assisted CD shrink and contact patterning for RRAM application
Milenin, Alexey; Lisoni, Judit; Jossart, Nico; Jurczak, Gosia; Struyf, Herbert; Shamiryan, Denis; Brouri, Mohand; Boullart, Werner (2010) -
Double torque perpendicular STT-MRAM devices for low power IoT and edge computing
Rao, Siddharth; Carpenter, Robert; Couet, Sebastien; Van Beek, Simon; Perumkunnil, Manu; Jossart, Nico; O'Sullivan, Barry; Kundu, Shreya; Kim, Woojin; Garello, Kevin; Souriau, Laurent; Yasin, Farrukh; Houshmand Sharifi, Shamin; Crotti, Davide; Kar, Gouri Sankar (2021) -
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution
Van Beek, Simon; Rao, Siddharth; Kundu, Shreya; Kim, Woojin; O'Sullivan, Barry J.; Cosemans, Stefan; Yasin, Farukh; Carpenter, Robert; Couet, Sebastien; Sharifi, Shamin H.; Jossart, Nico; Crotti, Davide; Kar, Gouri (2021) -
Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner
Ramesh, Siva; Ajaykumar, Arjun; Bastos, Joao; Breuil, Laurent; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Ragnarsson, Lars-Ake; Schleicher, Filip; Jossart, Nico; Stiers, Jimmy; Van den Bosch, Geert; Rosmeulen, Maarten (2020) -
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Goux, Ludovic; Sankaran, Kiroubanand; Kar, Gouri Sankar; Jossart, Nico; Opsomer, Karl; Degraeve, Robin; Pourtois, Geoffrey; Rignanese, G.-M.; Detavernier, C.; Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2012) -
First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices
Delhougne, Romain; Arreghini, Antonio; Rosseel, Erik; Hikavyy, Andriy; Vecchio, Emma; Zhang, Liping; Pak, Murat; Nyns, Laura; Raymaekers, Tom; Jossart, Nico; Breuil, Laurent; Vadakupudhu Palayam, Senthil; Tan, ChiLim; Van den Bosch, Geert; Furnemont, Arnaud (2018) -
First demonstration of MOVPE In1-xGaxAs macaroni channel for 3-D NAND memory devices
Ramesh, Siva; Vadakupudhu Palayam, Senthil; Rosseel, Erik; Arreghini, Antonio; Kunert, Bernardette; Baryshnikova, Marina; Zhang, Liping; Ong, Patrick; Teugels, Lieve; Pak, Murat; Jossart, Nico; Raymaekers, Tom; Stiers, Jimmy; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Chen, Yangyin; Goux, Ludovic; Pantisano, Luigi; Swerts, Johan; Adelmann, Christoph; Mertens, Sofie; Afanasiev, Valeri; Wang, Xin Peng; Govoreanu, Bogdan; Degraeve, Robin; Kubicek, Stefan; Paraschiv, Vasile; Verbrugge, Beatrijs; Jossart, Nico; Altimime, Laith; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2011) -
In depth analysis of 3D NAND enablers in gate stack integration and demonstration in 3D devices
Tan, Chi Lim; Lavizzari, Simone; Blomme, Pieter; Breuil, Laurent; Vecchio, Emma; Sebaai, Farid; Paraschiv, Vasile; Tao, Zheng; Schepers, Bart; Nyns, Laura; Peter, Antony; Dekkers, Harold; Ong, Patrick; Tsvetanova, Diana; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Raymaekers, Tom; Jossart, Nico; Mennella, Pasquale; Delhougne, Romain; Vadakupudhu Palayam, Senthil; Arreghini, Antonio; Van den Bosch, Geert; Furnemont, Arnaud (2017) -
Investigation of forming and its controllability in novel HfO2-based 1T1R 40nm-crossbar RRAM cells
Govoreanu, Bogdan; Kubicek, Stefan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Rakowski, Michal; Degraeve, Robin; Goux, Ludovic; Clima, Sergiu; Jossart, Nico; Adelmann, Christoph; Richard, Olivier; Raes, Thomas; Vangoidsenhoven, Diziana; Vandeweyer, Tom; Tielens, Hilde; Kellens, Kristof; Devriendt, Katia; Heylen, Nancy; Brus, Stephan; Verbrugge, Beatrijs; Pantisano, Luigi; Bender, Hugo; Pourtois, Geoffrey; Kittl, Jorge; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2011) -
Magnetic domain walls: from physics to devices
Raymenants, Eline; Wan, Danny; Couet, Sebastien; Canvel, Yann; Thiam, Arame; Tsvetanova, Diana; Souriau, Laurent; Asselberghs, Inge; Carpenter, Robert; Jossart, Nico; Manfrini, Mauricio; Vaysset, A.; Bultynck, Olivier; Van Beek, Simon; Heyns, Marc; Nikonov, D. E.; Young, I. A.; Ghosh, S.; Vila, L.; Garello, K.; Pizzini, S.; Nguyen, Van Dai; Radu, Iuliana (2021) -
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Garello, Kevin; Yasin, Farrukh; Hody, Hubert; Couet, Sebastien; Souriau, Laurent; Houshmand Sharifi, Shamin; Swerts, Johan; Carpenter, Robert; Rao, Siddharth; Kim, Woojin; Wu, Jackson; Vudya Sethu, Kiran Kumar; Pak, Murat; Jossart, Nico; Crotti, Davide; Furnemont, Arnaud; Kar, Gouri Sankar (2019) -
Microstructure evolution and thermal stability of phase change materi
Lisoni, Judit; Goux, Ludovic; Jossart, Nico; Delhougne, Romain; Attenborough, Karen; in't Zandt, Micha; Wolters, Rob; Wouters, Dirk (2008) -
MTJ degradation in multi-pillar SOT-MRAM with selective writing
Van Beek, Simon; Cai, Kaiming; Fan, Kaiquan; Talmelli, Giacomo; Trovato, Anna; Jossart, Nico; Rao, Siddharth; Vaisman Chasin, Adrian; Couet, Sebastien (2023) -
MTJ degradation in SOT-MRAM by self-heating-induced diffusion
Van Beek, Simon; Cai, Kaiming; Rao, Siddharth; Jayakumar, Ganesh; Couet, Sebastien; Jossart, Nico; Vaisman Chasin, Adrian; Kar, Gouri Sankar (2022) -
Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application
Kar, Gouri Sankar; Fantini, Andrea; Chen, Yangyin; Paraschiv, Vasile; Govoreanu, Bogdan; Hody, Hubert; Jossart, Nico; Tielens, Hilde; Brus, Stephan; Richard, Olivier; Vandeweyer, Tom; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2012) -
Quantification of process-induced damage in highly-scaled pMTJ devices for MRAM applications
Rao, Siddharth; Perumkunnil, Manu; Kundu, Shreya; Souriau, Laurent; Swerts, Johan; Couet, Sebastien; Yasin, Farrukh; Kim, Woojin; Tsvetanova, Diana; Jossart, Nico; Crotti, Davide; Furnemont, Arnaud; Kar, Gouri Sankar (2018)