Browsing by author "Degraeve, Robin"
Now showing items 1-20 of 486
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
1TFT-1RRAM cell on polymeric substrate as non-volatile memory element enabling future flexible electronic platforms
Lebanov, Ana; Fantini, Andrea; Degraeve, Robin; Nag, Manoj; Willegems, Myriam; Smout, Steve; Steudel, Soeren; Genoe, Jan; Heremans, Paul; Myny, Kris (2018) -
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
A cautionary note when looking for a truly reconfigurable resistive RAM PUF
Chuang, Kent; Degraeve, Robin; Fantini, Andrea; Groeseneken, Guido; Linten, Dimitri; Verbauwhede, Ingrid (2018) -
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes
Crupi, F.; Kaczer, Ben; Degraeve, Robin; De Keersgieter, An; Groeseneken, Guido (2003) -
A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
Amat, Esteve; Kauerauf, Thomas; Rodríguez, Rosana; Nafría, Montse; Aymerich, Xavier; Degraeve, Robin; Groeseneken, Guido (2013) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling
Roussel, Philippe; Degraeve, Robin; Sahhaf, Sahar; Groeseneken, Guido (2007) -
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
Degraeve, Robin; Groeseneken, Guido; Bellens, Rudi; Depas, Michel; Maes, Herman (1995) -
A disorder-controlled-kinetics model for Negative Bias Temperature Instability and its experimental verification
Kaczer, Ben; Arkhipov, Vladimir; Degraeve, Robin; Collaert, Nadine; Groeseneken, Guido; Goodwin, Michael (2005-04) -
A fast and simple methodology for lifetime prediction of ultra-thin oxides
Nigam, Tanya; Degraeve, Robin; Groeseneken, Guido; Maes, Herman (1999) -
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
Buscemi, F.; Piccinini, E.; Vandelli, L.; Nardi, F.; Padovani, A.; Kaczer, Ben; Garbin, Daniele; Clima, Sergiu; Degraeve, Robin; Kar, Gouri Sankar; Tavanti, F.; Slassi, A.; Calzolari, A.; Larcher, L. (2023) -
A multi-bits/cell PUF using analog breakdown positions in CMOS
Chuang, Kent; Bury, Erik; Degraeve, Robin; Kaczer, Ben; Kallstenius, Thomas; Groeseneken, Guido; Linten, Dimitri; Verbauwhede, Ingrid (2018) -
A multi-energy level agnostic approach for defect generation during TDDB stress
Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid (2022) -
A multi-energy level agnostic simulation approach to defect generation
Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid (2021) -
A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
Degraeve, Robin; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1996) -
A new breakdown failure mechanism in HfO2 gate dielectrics
Ranjan, R.; Pey, K.L.; Tang, L.J.; Tung, C.H.; Groeseneken, Guido; Radhakrishnan, M.K.; Kaczer, Ben; Degraeve, Robin; De Gendt, Stefan (2004) -
A new method for the analysis of high-resolution SILC data
Aresu, Stefano; De Ceuninck, Ward; Knuyt, G.; Mertens, Jan; Manca, Jean; De Schepper, Luc; Degraeve, Robin; Kaczer, Ben; D'Olieslaeger, Marc; D'Haen, Jan (2003) -
A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
Degraeve, Robin; Ogier, Jean-Luc; Bellens, Rudi; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1998) -
A new physically-based model for temperature acceleration of time-to-breakdown
Pangon, Nadège; Degraeve, Robin; Roussel, Philippe; Groeseneken, Guido; Maes, Herman; Crupi, Felice (1998)