Browsing by author "Degraeve, Robin"
Now showing items 21-40 of 486
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A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides
Degraeve, Robin; De Blauwe, Jan; Ogier, Jean-Luc; Roussel, Philippe; Groeseneken, Guido; Maes, Herman (1996) -
A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices
De Blauwe, Jan; Van Houdt, Jan; Wellekens, Dirk; Degraeve, Robin; Roussel, Philippe; Haspeslagh, Luc; Deferm, Ludo; Groeseneken, Guido; Maes, Herman (1996) -
A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
Degraeve, Robin; Roussel, Philippe; Ogier, Jean-Luc; Groeseneken, Guido; Maes, Herman (1996) -
A new TDDB reliability prediction methodology accounting for multiple SBD and wear out
Sahhaf, Sahar; Degraeve, Robin; Roussel, Philippe; Kaczer, Ben; Kauerauf, Thomas; Groeseneken, Guido (2009) -
A novel hot-hole injection degradation model for lateral nDMOS transistors
Moens, P.; Tack, Marnix; Degraeve, Robin; Groeseneken, Guido (2001) -
A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics
Crupi, Felice; Kauerauf, Thomas; Degraeve, Robin; Pantisano, Luigi; Groeseneken, Guido (2005-08) -
A physically unclonable function featuring 0% BER using soft oxide breakdown positions in 40nm CMOS
Chuang, Kent; Bury, Erik; Degraeve, Robin; Kaczer, Ben; Linten, Dimitri; Verbauwhede, Ingrid (2018) -
A physically unclonable function using soft oxide breakdown featuring 0% native BER and 51.8fJ/bit in 40nm CMOS
Chuang, Kent; Bury, Erik; Degraeve, Robin; Kaczer, Ben; Linten, Dimitri; Verbauwhede, Ingrid (2019) -
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability
Diaz Fortuny, Javier; Saraza Canflanca, Pablo; Bury, Erik; Vandemaele, Michiel; Kaczer, Ben; Degraeve, Robin (2022) -
A statistical approach to microdose induced degradation in FinFET devices
Griffoni, Alessio; Gerardin, S.; Roussel, Philippe; Degraeve, Robin; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2009) -
A study of relaxation current in high-k gate stacks
Xu, Zhen; Pantisano, Luigi; Kerber, Andreas; Degraeve, Robin; Cartier, Eduard; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2004-03) -
Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?
Kauerauf, Thomas; Degraeve, Robin; Zahid, Mohammed; Cho, Moon Ju; Kaczer, Ben; Roussel, Philippe; Groeseneken, Guido; Maes, Herman; De Gendt, Stefan (2005) -
Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultra thin oxides
Roussel, Philippe; Degraeve, Robin; Van den bosch, G.; Kaczer, Ben; Groeseneken, Guido (2001) -
Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics
Roussel, Philippe; Degraeve, Robin; Van den bosch, G.; Kaczer, Ben; Groeseneken, Guido (2001) -
Accurate reliability evaluation of non-uniform ultrathin and high-k layers
Roussel, Philippe; Degraeve, Robin; Kerber, Andreas; Pantisano, Luigi; Groeseneken, Guido (2003-03) -
Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics
Groeseneken, Guido; Pantisano, Luigi; Ragnarsson, Lars-Ake; Degraeve, Robin; Houssa, Michel; Kauerauf, Thomas; Roussel, Philippe; De Gendt, Stefan; Heyns, Marc (2004) -
Advanced cleaning and ultra-thin oxide technology
Heyns, Marc; Cornelissen, Ingrid; De Gendt, Stefan; Degraeve, Robin; Knotter, D. M.; Mertens, Paul; Mertens, S.; Meuris, Marc; Nigam, Tanya; Rotondaro, Antonio; Schaekers, Marc; Teerlinck, Ivo; Vos, Rita; Wolke, K. (1998) -
Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects
Zahid, Mohammed; Pantisano, Luigi; Degraeve, Robin; Aoulaiche, Marc; Trojman, Lionel; Ferain, Isabelle; San Andres Serrano, Enrique; Groeseneken, Guido; Zhang, J.F.; Heyns, Marc; Jurczak, Gosia; De Gendt, Stefan (2007) -
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
Morassi, L.; Larcher, L.; Pantisano, Luigi; Padovani, A.; Degraeve, Robin; Zahid, Mohammed; O'Sullivan, Barry (2009) -
Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric
Cho, Moon Ju; Aoulaiche, Marc; Degraeve, Robin; Kaczer, Ben; Kauerauf, Thomas; Ragnarsson, Lars-Ake; Adelmann, Christoph; Van Elshocht, Sven; Hoffmann, Thomas Y.; Groeseneken, Guido (2011)