Browsing by author "Jurczak, Gosia"
Now showing items 1-20 of 474
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Verheyen, Peter; Collaert, Nadine; Rooyackers, Rita; Loo, Roger; Shamiryan, Denis; De Keersgieter, An; Eneman, Geert; Leys, Frederik; Dixit, Abhisek; Goodwin, Michael; Yim, Yong Sik; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
2D and 3D Fully-depleted extension-less devices for advanced logic and memory applications
Veloso, Anabela; De Keersgieter, An; Aoulaiche, Marc; Jurczak, Gosia; Thean, Aaron; Horiguchi, Naoto (2012-09) -
45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Mitsuhashi, Riichirou; Yamamoto, Kazuhiko; Hayashi, S.; Rothschild, Aude; Kubicek, Stefan; Veloso, Anabela; Van Elshocht, Sven; Jurczak, Gosia; De Gendt, Stefan; Biesemans, Serge; Niwa, M. (2005) -
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Nackaerts, Axel; Ercken, Monique; Demuynck, Steven; Lauwers, Anne; Baerts, Christina; Bender, Hugo; Boullart, Werner; Collaert, Nadine; Degroote, Bart; Delvaux, Christie; de Marneffe, Jean-Francois; Dixit, Abhisek; De Meyer, Kristin; Hendrickx, Eric; Heylen, Nancy; Jaenen, Patrick; Laidler, David; Locorotondo, Sabrina; Maenhoudt, Mireille; Moelants, Myriam; Pollentier, Ivan; Ronse, Kurt; Rooyackers, Rita; Van Aelst, Joke; Vandenberghe, Geert; Vandervorst, Wilfried; Vandeweyer, Tom; Vanhaelemeersch, Serge; Van Hove, Marleen; Van Olmen, Jan; Verhaegen, Staf; Versluijs, Janko; Vrancken, Christa; Wiaux, Vincent; Jurczak, Gosia; Biesemans, Serge (2004-12) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node
Collaert, Nadine; Dixit, Abhisek; Goodwin, Michael; Kottantharayil, Anil; Rooyackers, Rita; Degroote, Bart; Leunissen, Peter; Veloso, Anabela; Jonckheere, Rik; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2004-08) -
A low-power multi-gate FET CMOS technology with 13.9ps inverter delay, large-scale integrated high performance digital circuits and SRAM
von Arnim, Klaus; Augendre, Emmanuel; Pacha, C.; Schulz, Thomas; San, Kemal Tamer; Bauer, F.; Nackaerts, Axel; Rooyackers, Rita; Vandeweyer, Tom; Degroote, Bart; Collaert, Nadine; Dixit, Abhisek; Singanamalla, Raghunath; Xiong, W.; Marshall, A.; Cleavelin, C.R.; Schrüfer, K.; Jurczak, Gosia (2007) -
A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
Collaert, Nadine; Aoulaiche, Marc; De Wachter, Bart; Rakowski, Michal; Redolfi, Augusto; Brus, Stephan; De Keersgieter, An; Horiguchi, Naoto; Altimime, Laith; Jurczak, Gosia (2010) -
A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node
Redolfi, Augusto; Goux, Ludovic; Jossart, Nico; Yamashita, Fumiko; Nishimura, Eiichi; Urayama, Daisuke; Fujimoto, Kiwamu; Witters, Thomas; Lazzarino, Frederic; Jurczak, Gosia (2015) -
A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 10^16 endurance at 85°C
Lu, Zhichao; Collaert, Nadine; Aoulaiche, Marc; De Wachter, Bart; De Keersgieter, An; Schwarzenbach, W.; Bonnin, O.; Bourdelle, K.K.; Nguyen, B.-Y.; Mazure, C.; Altimime, Laith; Jurczak, Gosia (2010) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Shi, Qixian; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li Qun; Le, Maggie; Lee, Won (2011) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li-Qun; Le, Maggie; Lee, Won (2010) -
A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
Ruiz Aguado, Daniel; Govoreanu, Bogdan; Zhang, W.D.; Jurczak, Gosia; De Meyer, Kristin; Van Houdt, Jan (2010) -
A systematic study of trade-offs in engineering a locally strained pMOSFET
Nouri, Faran; Verheyen, Peter; Washington, Lori; Moroz, Victor; De Wolf, Ingrid; Kawaguchi, S.; Biesemans, Serge; Schreutelkamp, Rob; Kim, Y.; Shen, M.; Xu, X.; Rooyackers, Rita; Jurczak, Gosia; Eneman, Geert; De Meyer, Kristin; Smith, L.; Pramanik, D.; Forstner, H.; Thirupapuliyur, S.; Higashi, G. (2004) -
A thermally stable and high-performance 90nm Al2O3\Cu-based 1T1R CBRAM cell
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Govoreanu, Bogdan; Crotti, Davide; Subhechha, Subhali; Zhang, Leqi; Chen, Yangyin; Clima, Sergiu; Paraschiv, Vasile; Hody, Hubert; Adelmann, Christoph; Popovici, Mihaela Ioana; Richard, Olivier; Jurczak, Gosia (2015) -
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations
Liang, Zhao; Clima, Sergiu; Magyari-Köpe, Blanka; Jurczak, Gosia; Nishi, Yoshio (2015)