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25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
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Authors
Verheyen, Peter
;
Collaert, Nadine
;
Rooyackers, Rita
;
Loo, Roger
;
Shamiryan, Denis
;
De Keersgieter, An
;
Eneman, Geert
;
Leys, Frederik
;
Dixit, Abhisek
;
Goodwin, Michael
;
Yim, Yong Sik
;
Caymax, Matty
;
De Meyer, Kristin
;
Absil, Philippe
;
Jurczak, Gosia
;
Biesemans, Serge
Conference
Symposium on VLSI Technology. Digest of Technical Papers
Title
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Publication type
Proceedings paper
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