Publication:
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
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2072 since deposited on 2021-10-16
2last month
1last week
Acq. date: 2026-01-07
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Metrics
Views
2072 since deposited on 2021-10-16
2last month
1last week
Acq. date: 2026-01-07
Citations