Publication:
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
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2070 since deposited on 2021-10-16
3last month
Acq. date: 2025-12-08
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Metrics
Views
2070 since deposited on 2021-10-16
3last month
Acq. date: 2025-12-08
Citations