Publication:

25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

Date

2005

Proceedings Paper

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Author(s)

Verheyen, Peter

;

Collaert, Nadine

;

Rooyackers, Rita

;

;

Shamiryan, Denis

;

De Keersgieter, An

;

;

;

;

Goodwin, Michael

;

;

;

De Meyer, Kristin

;

Absil, Philippe

;

;

Biesemans, Serge

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2078 since deposited on 2021-10-16

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Acq. date: 2026-03-17