Publication:
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Date
Loading...
Journal
Abstract
Description
Statistics
Views
2075 since deposited on 2021-10-16
4last month
1last week
Acq. date: 2026-01-25
Citations
Statistics
Views
2075 since deposited on 2021-10-16
4last month
1last week
Acq. date: 2026-01-25
Citations