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25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

Date

2005
Proceedings Paper
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dc.contributor.authorVerheyen, Peter
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLoo, Roger
dc.contributor.authorShamiryan, Denis
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorEneman, Geert
dc.contributor.authorLeys, Frederik
dc.contributor.authorDixit, Abhisek
dc.contributor.authorGoodwin, Michael
dc.contributor.authorYim, Yong Sik
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-16T06:49:59Z
dc.date.available2021-10-16T06:49:59Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11508
dc.source.beginpage194
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2005
dc.source.conferencelocationKyoto Japan
dc.source.endpage195
dc.title

25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

dc.typeProceedings paper
dspace.entity.typePublication
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