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  4. A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
 
Publication:

A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography

Date

2004-12
Proceedings Paper
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Author(s)

Nackaerts, Axel
;
Ercken, Monique  
;
Demuynck, Steven  
;
Lauwers, Anne  
;
Baerts, Christina  
;
Bender, Hugo  
;
Boullart, Werner  
;
Collaert, Nadine  
;
Degroote, Bart
;
Delvaux, Christie  
;
de Marneffe, Jean-Francois  
;
Dixit, Abhisek
;
De Meyer, Kristin  
;
Hendrickx, Eric  
;
Heylen, Nancy  
;
Jaenen, Patrick  
;
Laidler, David  
;
Locorotondo, Sabrina  
;
Maenhoudt, Mireille
;
Moelants, Myriam  
;
Pollentier, Ivan  
;
Ronse, Kurt  
;
Rooyackers, Rita
;
Van Aelst, Joke  
;
Vandenberghe, Geert  
;
Vandervorst, Wilfried  
;
Vandeweyer, Tom  
;
Vanhaelemeersch, Serge  
;
Van Hove, Marleen
;
Van Olmen, Jan  
;
Verhaegen, Staf
;
Versluijs, Janko  
;
Vrancken, Christa  
;
Wiaux, Vincent  
;
Jurczak, Gosia  
;
Biesemans, Serge  

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2201 since deposited on 2021-10-15
Acq. date: 2025-10-23

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2201 since deposited on 2021-10-15
Acq. date: 2025-10-23

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