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A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Publication:
A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Date
2004-12
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nackaerts, Axel
;
Ercken, Monique
;
Demuynck, Steven
;
Lauwers, Anne
;
Baerts, Christina
;
Bender, Hugo
;
Boullart, Werner
;
Collaert, Nadine
;
Degroote, Bart
;
Delvaux, Christie
;
de Marneffe, Jean-Francois
;
Dixit, Abhisek
;
De Meyer, Kristin
;
Hendrickx, Eric
;
Heylen, Nancy
;
Jaenen, Patrick
;
Laidler, David
;
Locorotondo, Sabrina
;
Maenhoudt, Mireille
;
Moelants, Myriam
;
Pollentier, Ivan
;
Ronse, Kurt
;
Rooyackers, Rita
;
Van Aelst, Joke
;
Vandenberghe, Geert
;
Vandervorst, Wilfried
;
Vandeweyer, Tom
;
Vanhaelemeersch, Serge
;
Van Hove, Marleen
;
Van Olmen, Jan
;
Verhaegen, Staf
;
Versluijs, Janko
;
Vrancken, Christa
;
Wiaux, Vincent
;
Jurczak, Gosia
;
Biesemans, Serge
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2201
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
2201
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations