Publication:

A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography

Date

2004-12
Proceedings Paper
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dc.contributor.authorNackaerts, Axel
dc.contributor.authorErcken, Monique
dc.contributor.authorDemuynck, Steven
dc.contributor.authorLauwers, Anne
dc.contributor.authorBaerts, Christina
dc.contributor.authorBender, Hugo
dc.contributor.authorBoullart, Werner
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDegroote, Bart
dc.contributor.authorDelvaux, Christie
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDixit, Abhisek
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHendrickx, Eric
dc.contributor.authorHeylen, Nancy
dc.contributor.authorJaenen, Patrick
dc.contributor.authorLaidler, David
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorMaenhoudt, Mireille
dc.contributor.authorMoelants, Myriam
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorBaerts, Christina
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDelvaux, Christie
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorJaenen, Patrick
dc.contributor.imecauthorLaidler, David
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorMoelants, Myriam
dc.contributor.imecauthorPollentier, Ivan
dc.contributor.imecauthorRonse, Kurt
dc.contributor.imecauthorVan Aelst, Joke
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLaidler, David::0000-0003-4055-3366
dc.contributor.orcidimecPollentier, Ivan::0000-0002-4266-6500
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.accessioned2021-10-15T15:01:54Z
dc.date.available2021-10-15T15:01:54Z
dc.date.issued2004-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9333
dc.source.beginpage269
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate13/12/2004
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage272
dc.title

A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography

dc.typeProceedings paper
dspace.entity.typePublication
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