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Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations
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Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations
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Date
2015
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Liang, Zhao
;
Clima, Sergiu
;
Magyari-Köpe, Blanka
;
Jurczak, Gosia
;
Nishi, Yoshio
Journal
Applied Physics Letters
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since deposited on 2021-10-22
Acq. date: 2025-12-11
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1959
since deposited on 2021-10-22
Acq. date: 2025-12-11
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Downloads
1
since deposited on 2021-10-22
Acq. date: 2025-12-11
Views
1959
since deposited on 2021-10-22
Acq. date: 2025-12-11
Citations