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Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations

Date

2015
Journal article
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dc.contributor.authorLiang, Zhao
dc.contributor.authorClima, Sergiu
dc.contributor.authorMagyari-Köpe, Blanka
dc.contributor.authorJurczak, Gosia
dc.contributor.authorNishi, Yoshio
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.date.accessioned2021-10-22T20:36:00Z
dc.date.available2021-10-22T20:36:00Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25560
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/107/1/10.1063/1.4926337
dc.source.beginpage13504
dc.source.issue1
dc.source.journalApplied Physics Letters
dc.source.volume107
dc.title

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations

dc.typeJournal article
dspace.entity.typePublication
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