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45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
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Authors
Mitsuhashi, Riichirou
;
Yamamoto, Kazuhiko
;
Hayashi, S.
;
Rothschild, Aude
;
Kubicek, Stefan
;
Veloso, Anabela
;
Van Elshocht, Sven
;
Jurczak, Gosia
;
De Gendt, Stefan
;
Biesemans, Serge
;
Niwa, M.
Journal
Microelectronic Engineering
Volume
80
Title
45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Publication type
Journal article
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