Publication:

45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

Date

2005
Journal article
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dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorYamamoto, Kazuhiko
dc.contributor.authorHayashi, S.
dc.contributor.authorRothschild, Aude
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNiwa, M.
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T03:28:02Z
dc.date.available2021-10-16T03:28:02Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10892
dc.source.beginpage7
dc.source.endpage10
dc.source.journalMicroelectronic Engineering
dc.source.volume80
dc.title

45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

dc.typeJournal article
dspace.entity.typePublication
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