Publication:

45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

Date

2005

Journal article

Simple item page Full metadata Statistics

Author(s)

Mitsuhashi, Riichirou

;

Yamamoto, Kazuhiko

;

;

Rothschild, Aude

;

Kubicek, Stefan

;

Veloso, Anabela

;

Van Elshocht, Sven

;

;

De Gendt, Stefan

;

Biesemans, Serge

;

Journal

Microelectronic Engineering

Statistics

2016 since deposited on 2021-10-16

Acq. date: 2026-04-26