45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

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Author(s)

Mitsuhashi, Riichirou

;

Yamamoto, Kazuhiko

;

;

Rothschild, Aude

;

Kubicek, Stefan

;

Veloso, Anabela

;

Van Elshocht, Sven

;

;

De Gendt, Stefan

;

Biesemans, Serge

;

Journal

Microelectronic Engineering

Metrics

2007 since deposited on 2021-10-16

1last month

Acq. date: 2025-12-08