Publication:

45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

Date

2005
Journal article
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Author(s)

Mitsuhashi, Riichirou
;
Yamamoto, Kazuhiko
;
Hayashi, S.
;
Rothschild, Aude
;
Kubicek, Stefan  
;
Veloso, Anabela  
;
Van Elshocht, Sven  
;
Jurczak, Gosia  
;
De Gendt, Stefan  
;
Biesemans, Serge  
;
Niwa, M.

Journal

Microelectronic Engineering

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2010 since deposited on 2021-10-16
2last month
Acq. date: 2026-01-12

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