Browsing by author "Pantisano, Luigi"

1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

Magnone, P.; Crupi, F.; Giusi, G.; Pace, C.; Simoen, Eddy; Claeys, Cor; Pantisano, Luigi; Maji, D.; Rao, V.R.; Srinivasan, P. (2009)

85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

Mitard, Jerome; Witters, Liesbeth; Eneman, Geert; Hellings, Geert; Pantisano, Luigi; Hikavyy, Andriy; Loo, Roger; Eyben, Pierre; Horiguchi, Naoto; Thean, Aaron (2012)

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007)

A novel methodology for sensing the breakdown location and its application to the reliability study of ultra-thin Hf-silicate gate dielectrics

Crupi, Felice; Kauerauf, Thomas; Degraeve, Robin; Pantisano, Luigi; Groeseneken, Guido (2005-08)

A reliable metric for mobility extraction of short channel MOSFETs

Severi, Simone; Pantisano, Luigi; Augendre, Emmanuel; San Andres Serrano, Enrique; Eyben, Pierre; De Meyer, Kristin (2007)

A study of relaxation current in high-k gate stacks

Xu, Zhen; Pantisano, Luigi; Kerber, Andreas; Degraeve, Robin; Cartier, Eduard; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2004-03)

Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

San Andres Serrano, Enrique; Pantisano, Luigi; Ramos, Javier; Roussel, Philippe; O'Sullivan, Barry; Toledano Luque, Maria; De Gendt, Stefan; Groeseneken, Guido (2007)

Accurate reliability evaluation of non-uniform ultrathin and high-k layers

Roussel, Philippe; Degraeve, Robin; Kerber, Andreas; Pantisano, Luigi; Groeseneken, Guido (2003-03)

Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

Groeseneken, Guido; Pantisano, Luigi; Ragnarsson, Lars-Ake; Degraeve, Robin; Houssa, Michel; Kauerauf, Thomas; Roussel, Philippe; De Gendt, Stefan; Heyns, Marc (2004)

Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

Shickova, Adelina; Kauerauf, Thomas; Rothschild, Aude; Aoulaiche, Marc; Sahhaf, Sahar; Kaczer, Ben; Veloso, Anabela; Torregiani, Cristina; Pantisano, Luigi; Lauwers, Anne; Zahid, Mohammed; Rost, Tim; Tigelaar, H.; Pas, M.; Fretwell, J.; McCormack, J.; Hoffmann, Thomas; Kerner, Christoph; Chiarella, Thomas; Brus, Stephan; Harada, Yoshinao; Niwa, Masaaki; Kaushik, Vidya; Maes, Herman; Absil, Philippe; Groeseneken, Guido; Biesemans, Serge; Kittl, Jorge (2007)

Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

Zahid, Mohammed; Pantisano, Luigi; Degraeve, Robin; Aoulaiche, Marc; Trojman, Lionel; Ferain, Isabelle; San Andres Serrano, Enrique; Groeseneken, Guido; Zhang, J.F.; Heyns, Marc; Jurczak, Gosia; De Gendt, Stefan (2007)

Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing

Morassi, L.; Larcher, L.; Pantisano, Luigi; Padovani, A.; Degraeve, Robin; Zahid, Mohammed; O'Sullivan, Barry (2009)

ALD deposition of high-k and metal gate stacks for advanced CMOS applications

Heyns, Marc; Beckx, Stephan; Caymax, Matty; Claes, Martine; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hooker, Jacob; Houssa, Michel; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Maes, Jan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, R.; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Van Elshocht, Sven; Vandervorst, Wilfried (2004)