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85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

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1 since deposited on 2021-10-20
Acq. date: 2026-01-11

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Acq. date: 2026-01-11

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1 since deposited on 2021-10-20
Acq. date: 2026-01-11

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2000 since deposited on 2021-10-20
2last month
Acq. date: 2026-01-11

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