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Conference contributions
85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Publication:
85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
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Date
2012
Proceedings Paper
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24428.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
Witters, Liesbeth
;
Eneman, Geert
;
Hellings, Geert
;
Pantisano, Luigi
;
Hikavyy, Andriy
;
Loo, Roger
;
Eyben, Pierre
;
Horiguchi, Naoto
;
Thean, Aaron
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1
since deposited on 2021-10-20
Acq. date: 2025-12-09
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1998
since deposited on 2021-10-20
Acq. date: 2025-12-09
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Downloads
1
since deposited on 2021-10-20
Acq. date: 2025-12-09
Views
1998
since deposited on 2021-10-20
Acq. date: 2025-12-09
Citations