Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Conference contributions
85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Publication:
85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Date
2012
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
24428.pdf
769.44 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
Witters, Liesbeth
;
Eneman, Geert
;
Hellings, Geert
;
Pantisano, Luigi
;
Hikavyy, Andriy
;
Loo, Roger
;
Eyben, Pierre
;
Horiguchi, Naoto
;
Thean, Aaron
Journal
Abstract
Description
Metrics
Downloads
1
since deposited on 2021-10-20
Acq. date: 2025-10-24
Views
1995
since deposited on 2021-10-20
Acq. date: 2025-10-24
Citations
Metrics
Downloads
1
since deposited on 2021-10-20
Acq. date: 2025-10-24
Views
1995
since deposited on 2021-10-20
Acq. date: 2025-10-24
Citations