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85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

Date

2012
Proceedings Paper
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dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorHellings, Geert
dc.contributor.authorPantisano, Luigi
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorEyben, Pierre
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecEyben, Pierre::0000-0003-3686-556X
dc.date.accessioned2021-10-20T13:35:24Z
dc.date.available2021-10-20T13:35:24Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21156
dc.source.beginpage163
dc.source.conferenceSymposium on VLSI Technology - VLSIT
dc.source.conferencedate12/06/2012
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage164
dc.title

85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study

dc.typeProceedings paper
dspace.entity.typePublication
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