Browsing by author "Pantisano, Luigi"
Now showing items 21-40 of 168
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Characterization of the Vt-instability un SiO2 HFO2 gate dielectrics
Kerber, Andreas; Cartier, E.; Pantisano, Luigi; Rosmeulen, Maarten; Degraeve, Robin; Kauerauf, Thomas; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2003) -
Charge characterisation in metal-gate/high-k layers: Effect of post-deposition annealing and gate electrode
O'Sullivan, Barry; Pourtois, Geoffrey; Kaushik, Vidya; Schram, Tom; Kittl, Jorge; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2007-07) -
Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection
Toledano-Luque, M.; Pantisano, Luigi; Degraeve, Robin; Zahid, Mohammed; Ferain, Isabelle; San Andres Serrano, Enrique; Groeseneken, Guido; De Gendt, Stefan (2007) -
Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration
Kerber, Andreas; Cartier, Eduard; Degraeve, Robin; Roussel, Philippe; Pantisano, Luigi; Kauerauf, Thomas; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2002) -
Charge trapping and dielectric reliability in alternative gate dielectrics: a key challenge for integration
Kerber, Andreas; Cartier, Eduard; Degraeve, Robin; Roussel, Philippe; Pantisano, Luigi; Kauerauf, Thomas; Groeseneken, Guido; De Gendt, Stefan; Heyns, Marc (2003) -
Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
Kerber, Andreas; Cartier, Eduard; Degraeve, Robin; Roussel, Philippe; Pantisano, Luigi; Kauerauf, Thomas; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2003) -
Charge trapping in SiO2/HfO2 dual layer gate stacks
Cartier, E.; Kerber, A.; Pantisano, Luigi (2004) -
Charge trapping in SiO2/HfO2 gate dielctrics: comparison between charge-pumping and pulsed I-D-V-G
Kerber, A.; Cartier, E.; Pantisano, Luigi; Degraeve, Robin; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2004) -
Charge trapping, mobility degradation and reliability of high-e gate stacks
Cartier, Eduard; Kerber, Andreas; Pantisano, Luigi; Carter, Richard; Kauerauf, Thomas; Degraeve, Robin (2002) -
Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectrics
Kerber, Andreas; Cartier, Eduard; Pantisano, Luigi; Degraeve, Robin; Groeseneken, Guido; Maes, Herman; Schwalke, U. (2002) -
Correlation between charge Injection and trapping in SiO2/HfO2 gate stacks
Cartier, Eduard; Pantisano, Luigi; Kerber, Andreas; Groeseneken, Guido (2003) -
Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
Nguyen Hoang, Thoan; Jivanescu, Mihaela; O'Sullivan, Barry; Pantisano, Luigi; Gordon, Ivan; Afanas'ev, Valery; Stesmans, Andre (2012) -
Defect profiling in the SiO2/Al2O3 interface using variable Tcharge-Tdischarge amplitude charge pumping (VT2ACP)
Zahid, Mohammed; Degraeve, Robin; Cho, Moon Ju; Pantisano, Luigi; Van Houdt, Jan; Groeseneken, Guido; Jurczak, Gosia; Ruiz Aguado, Daniel (2009) -
Defects generation in SiO2/HfO2 studied with variable Tcharge-Tdischarge charge pumping (VT2CP)
Zahid, Mohammed; Degraeve, Robin; Pantisano, Luigi; Zhang, John; Groeseneken, Guido (2007) -
Depassivation of latent plasma damage in nMOSFETs
Cellere, G.; Pantisano, Luigi; Valentini, M. G.; Paccagnella, A. (2001) -
Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel
Horiguchi, Naoto; Zschaetzsch, Gerd; Sasaki, Yuichiro; Kambham, Ajay Kumar; Togo, Mitsuhiro; Cho, Moon Ju; Ragnarsson, Lars-Ake; Hellings, Geert; Mitard, Jerome; Franco, Jacopo; Eneman, Geert; Witters, Liesbeth; Waldron, Niamh; Lin, Dennis; Pantisano, Luigi; Collaert, Nadine; Vandervorst, Wilfried; Thean, Aaron (2012-09) -
Different nature of process-induced and stress-induced defects in thin SiO2 layers
Cellere, G.; Valentini, M.G.; Pantisano, Luigi; Cheung, K.P.; Paccagnella, A. (2003) -
Direct measurement of barrier height at the HfO2/poly-Si interface:
Pantisano, Luigi; Chen, Pei Jun; Afanas'ev, Valeri; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; Groeseneken, Guido (2004-06) -
Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics
Kerber, Andreas; Cartier, Eduard; Ragnarsson, Lars-Ake; Rosmeulen, Maarten; Pantisano, Luigi; Degraeve, Robin; Kim, Young-Chang; Groeseneken, Guido (2003) -
Dominant layer for stress-induced positive charges in Hf-based gate stacks
Zhang, Jian F.; Chang, M.H.; Ji, Z.; Lin, L.; Ferain, Isabelle; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008)