Browsing by author "Tallarico, Andrea Natale"
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Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio (2019) -
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Matteo; Kang, Xuanwu; Bakeroot, Benoit; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido (2017)