Toggle navigation
My submissions
Login
Toggle navigation
View item
imec Publications Repository
imec Publications
Articles
View item
imec Publications Repository
imec Publications
Articles
View item
JavaScript is disabled for your browser. Some features of this site may not work without it.
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
View/
open
33090.pdf (1.053Mb)
Metadata
Show full item record
Authors
Hu, Jie
;
Stoffels, Steve
;
Zhao, Ming
;
Tallarico, Andrea Natale
;
Rossetto, Isabella
;
Meneghini, Matteo
;
Kang, Xuanwu
;
Bakeroot, Benoit
;
Kaczer, Ben
;
Decoutere, Stefaan
;
Groeseneken, Guido
ISSN
0741-3106
Issue
3
Journal
IEEE Electron Device Letters
Volume
38
Title
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Publication type
Journal article
Embargo date
9999-12-31
Collections
Articles
Search imec Publications Repository
This collection
Browse
All of imec Publications Repository
Collections
Publication date
Authors
Titles
Subjects
imec author
Availability
Publication type
This collection
Publication date
Authors
Titles
Subjects
imec author
Availability
Publication type
My account
login