Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Matteo; Kang, Xuanwu; Bakeroot, Benoit; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido

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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Date

2017

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Hu, Jie

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Stoffels, Steve

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Zhao, Ming

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Tallarico, Andrea Natale

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IEEE Electron Device Letters

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Acq. date: 2026-10-13

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

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