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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Publication:
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Date
2017
Journal article
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33090.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hu, Jie
;
Stoffels, Steve
;
Zhao, Ming
;
Tallarico, Andrea Natale
;
Rossetto, Isabella
;
Meneghini, Matteo
;
Kang, Xuanwu
;
Bakeroot, Benoit
;
Kaczer, Ben
;
Decoutere, Stefaan
;
Groeseneken, Guido
Journal
IEEE Electron Device Letters
Abstract
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Metrics
Views
1931
since deposited on 2021-10-24
424
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations