Publication:

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Date

2017
Journal article
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dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorTallarico, Andrea Natale
dc.contributor.authorRossetto, Isabella
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorKang, Xuanwu
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorKaczer, Ben
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-24T05:58:00Z
dc.date.available2021-10-24T05:58:00Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28542
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7836313/
dc.source.beginpage371
dc.source.endpage374
dc.source.issue3
dc.source.journalIEEE Electron Device Letters
dc.source.volume38
dc.title

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

dc.typeJournal article
dspace.entity.typePublication
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