Browsing by author "Voytovych, V."
Now showing items 1-5 of 5
-
Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities
David, M.L.; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinski, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2004) -
Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
David, Marie-Laure; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2005) -
On the effect of lead on irradiation induced defects in silicon
David, M.L.; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2005) -
Oxygen precipitation and thermal donor formation in Pb and C-doped n-type Czochralski silicon
Neimash, M.V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, O.; Tsmots, V.; Simoen, Eddy; Claeys, Cor (2004-10) -
Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
David, Marie-Laure; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Tishchenko, V.; Barbot, J.F. (2004)