Browsing by author "Matsushita, K."
Now showing items 1-4 of 4
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Improved low-k dielectric properties using He/H2 plasma for resist removal
Urbanowicz, Adam; Shamiryan, Denis; Marsik, Premysl; Travaly, Youssef; Verdonck, Patrick; Vanstreels, Kris; Ferchichi, Abdelkarim; De Roest, David; Sprey, Hessel; Matsushita, K.; Kaneko, S.; Tsuji, N.; Luo, S.; Escorcia, O.; Berry, Ivan; Waldfried, Carlo; De Gendt, Stefan; Baklanov, Mikhaïl (2008) -
Integration of porogen-based low-k films: influence of capping layer thickness and long thermal anneals on low-k damage and reliability
De Roest, David; Vereecke, Bart; Huffman, Craig; Heylen, Nancy; Croes, Kristof; Arai, H.; Takamure, N.; Beynet, Julien; Sprey, Hessel; Matsushita, K.; Kobayashi, N.; Verdonck, Patrick; Demuynck, Steven; Beyer, Gerald; Tokei, Zsolt (2009) -
Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials
Travaly, Youssef; Van Aelst, Joke; Truffert, Vincent; Verdonck, Patrick; Dupont, Tania; Camerotto, Elisabeth; Richard, Olivier; Bender, Hugo; Croes, Kristof; De Roest, David; Vereecke, Guy; Claes, Martine; Le, Quoc Toan; Kesters, Els; Van Cauwenberghe, Marc; Beynet, Julien; Kaneko, S.; Struyf, Herbert; Baklanov, Mikhaïl; Matsushita, K.; Kobayashi, N.; Sprey, Hessel; Beyer, Gerald (2008) -
Variation in process conditions of porogen-based low-k films: a method to improve performance without changing existing process steps in a sub-100nm Cu damascene integration route
De Roest, David; Travaly, Youssef; Beynet, Julien; Sprey, Hessel; Labat, Julianne; Huffman, Craig; Verdonck, Patrick; Kaneko, S.; Matsushita, K.; Kobayashi, N.; Beyer, Gerald (2009)