Browsing by author "Stokbro, Kurt"
Now showing items 1-4 of 4
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A first principles study of the oscillatory behavior of tunnel magnetoresitance: On the impact of magnetic and tunneling barrier layers and of the capping metals
Sankaran, Kiroubanand; Swerts, Johan; Couet, Sebastien; Furnemont, Arnaud; Stokbro, Kurt; Pourtois, Geoffrey (2016) -
First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths
Lu, Augustin; Pourtois, Geoffrey; Stokbro, Kurt; Thean, Aaron; Radu, Iuliana; Houssa, Michel (2015) -
Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study
Sankaran, Kiroubanand; Swerts, Johan; Couet, Sebastien; Stokbro, Kurt; Pourtois, Geoffrey (2016-09) -
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
Pourtois, Geoffrey; Dabral, Ashish; Sankaran, Kiroubanand; Magnus, Wim; Yu, Hao; de Jamblinne de Meux, Albert; Lu, Augustin; Clima, Sergiu; Stokbro, Kurt; Schaekers, Marc; Houssa, Michel; Collaert, Nadine; Horiguchi, Naoto (2017)