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First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths
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Authors
Lu, Augustin
;
Pourtois, Geoffrey
;
Stokbro, Kurt
;
Thean, Aaron
;
Radu, Iuliana
;
Houssa, Michel
Conference
IEEE Semiconductor Interface Specialists Conference - SISC
Title
First-principles study of the performance degradation of 2D channel-based transistors with sub-10 nm gate lengths
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