Browsing by author "Bina, Markus"
Now showing items 1-7 of 7
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Degradation of time dependent variability due to interface state generation
Toledano Luque, Maria; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Bina, Markus; Grasser, Tibor; Cho, Moon Ju; Weckx, Pieter; Groeseneken, Guido (2013) -
Extraction of the lateral position of border traps in nanoscale MOSFETs
Illarionov, Yury; Bina, Markus; Tyaginov, Stanislav; Rott, Karina; Kaczer, Ben; Reisinger, Hans; Grasser, Tibor (2015) -
On the importance of electron-electron scattering for hot-carrier
Tyaginov, Stanislav; Bina, Markus; Franco, Jacopo; Wimmer, Yannick; Kaczer, Ben; Grasser, Tibor (2015) -
Origins and implications of increased channel hot carrier variability in nFinFETs
Kaczer, Ben; Franco, Jacopo; Cho, Moon Ju; Grasser, Tibor; Roussel, Philippe; Tyaginov, Stanislav; Bina, Markus; Wimmer, Y.; Procel, L. M.; Trojman, Lionel; Crupi, Felice; Pitner, Gregory; Putcha, Vamsi; Weckx, Pieter; Bury, Erik; Ji, Z.; De Keersgieter, An; Chiarella, Thomas; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron (2015) -
Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias
Franco, Jacopo; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Groeseneken, Guido; Schwarz, Benedikt; Bina, Markus; Waltl, Michael; Wagner, Paul-Juergen; Grasser, Tibor (2013) -
Simulation of rReliability of nanoscale devices
Bina, Markus; Triebl, O.; Karner, M.; Kaczer, Ben; Grasser, Tibor (2012) -
The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes
Kaczer, Ben; Franco, Jacopo; Toledano Luque, Maria; Roussel, Philippe; Bukhori, M. F.; Asenov, Asen; Schwarz, Benedikt; Bina, Markus; Grasser, Tibor; Groeseneken, Guido (2012)