Browsing by author "Tsai, W."
Now showing items 1-4 of 4
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Approaching Fermi level unpinning in oxide-In0.2Ga0.8As
Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, Dennis; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M. (2008) -
Challenges in integration of metal gate high-k dielectrics gate stacks
Tsai, W.; Ragnarsson, Lars-Ake; Schram, Tom; De Gendt, Stefan; Heyns, Marc (2004) -
High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies
Caymax, Matty; Bender, Hugo; Brijs, Bert; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Onsia, Bart; Ragnarsson, Lars-Ake; Richard, Olivier; Vandervorst, Wilfried; Van Elshocht, Sven; Zhao, Chao; Maes, J.W.; Daté, L.; Pique, D.; Young, E.; Tsai, W.; Shimamoto, Y. (2003) -
Plasma modification of Hf based high-k dielectrics: effect of nitridation and silicon nitride deposition
Tsai, W.; Maes, J.W.; De Witte, Hilde; Chen, J.; Delabie, Annelies; Carter, Richard; Richard, Olivier; Caymax, Matty; Conard, Thierry; Young, Edward; De Gendt, Stefan (2004)