Browsing by author "Wang, Hongyue"
Now showing items 1-3 of 3
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Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
Wang, Hongyue; Wang, Jinyan; Hsu, Brent; Zhao, Ming; Simoen, Eddy; Sibaja-Hernandez, Arturo (2021-11-22) -
Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
Wang, Hongyue; Hsu, Brent; Zhao, Ming; Simoen, Eddy; Sibaja-Hernandez, Arturo; Wang, Jinyang (2020) -
Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications
Simoen, Eddy; Hsu, Brent; Yu, Hao; Wang, Hongyue; Zhao, Ming; Takakura, Kenichiro; Putcha, Vamsi; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020)