Browsing by author "Nakazawa, Masashi"
Now showing items 1-5 of 5
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Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Pourtois, Geoffrey; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty (2014) -
First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty; Pourtois, Geoffrey (2014) -
First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping
Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Caymax, Matty; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Pourtois, Geoffrey (2014) -
Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks
Yoshida, Shinichi; Lin, Dennis; Vais, Abhitosh; Alian, AliReza; Franco, Jacopo; El Kazzi, Salim; Mols, Yves; Miyanami, Yuki; Nakazawa, Masashi; Collaert, Nadine; Watanabe, H; Thean, Aaron (2016) -
The impact of energy barrier height on border traps in III-V gate stacks
Yoshida, S.; Taniguchi, S.; Minari, Hideki; Lin, Dennis; Ivanov, Tsvetan; Watanabe, H.; Nakazawa, Masashi; Collaert, Nadine; Thean, Aaron (2015)