Browsing by author "Sangiorgi, Enrico"
Now showing items 1-5 of 5
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Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Tallarico, Andrea; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2017) -
PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms
Tallarico, Andrea; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio (2018) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio (2019) -
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence
Tallarico, Andrea; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2016)