Browsing by author "Zhang, E."

Now showing items 1-2 of 2

Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

Mahatme, N.; Zhang, E.; Reed, R.A.; Bhuva, B.L.; Schrimpf, R.D.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Griffoni, Alessio; Aoulaiche, Marc; Jurczak, Gosia; Groeseneken, Guido (2012)
Single- and multiple-event induced upsets in HfO2/Hf 1T1R RRAM

Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Mendenhall, M.H.; Alles, M.; Bi, J.; Zhang, E.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014)