Browsing by author "Lederer, Dimitri"
Now showing items 1-6 of 6
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Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effects
Kilchytska, Valeriya; Lederer, Dimitri; Collaert, Nadine; Jean-Pierre, Raskin; Flandre, Denis (2005-10) -
FinFET analogue characterization from DC to 110 GHz
Lederer, Dimitri; Kilchytska, V.; Rudenko, T.; Collaert, Nadine; Flandre, D.; Dixit, Abhisek; De Meyer, Kristin; Raskin, J.P. (2005) -
Frequency variation of the small-signal output conductance of decananometer MOSFETs due to the substrate crosstalk
Kilchytska, Valeria; Pailloncy, G.; Lederer, Dimitri; Raskin, Jean-Pierre; Collaert, Nadine; Jurczak, Gosia; Flandre, Denis (2007-05) -
High-frequency noise performance of 60-nm gate-length FinFETs
Raskin, Jean-Pierre; Pailloncy, Guillaume; Lederer, Dimitri; Danneville, Francois; Dambrine, Gilles; Decoutere, Stefaan; Mercha, Abdelkarim; Parvais, Bertrand (2008) -
Perspective of FinFETs for analog applications
Kilchytska, Valeria; Collaert, Nadine; Rooyackers, Rita; Lederer, Dimitri; Raskin, Jean-Pierre; Flandre, Denis (2004) -
Revised split C-V technique for mobility investigation in advanced devices
Kilchytska, Valeria; Lederer, Dimitri; Simon, P.; Collaert, Nadine; Raskin, Jean-Pierre; Flandre, Denis (2005)