Browsing by author "Meinerzhagen, Bernd"
Now showing items 1-3 of 3
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Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current
Pham, Anh-Tuan; Zhao, Qing-Tai; Jungemann, Christoph; Meinerzhagen, Bernd; Soree, Bart; Pourtois, Geoffrey (2011) -
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Pham, Anton; Soree, Bart; Magnus, Wim; Jungemann, Christoph; Meinerzhagen, Bernd; Pourtois, Geoffrey (2012) -
Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Pham, Anton; Soree, Bart; Magnus, Wim; Jungemann, Christoph; Meinerzhagen, Bernd; Pourtois, Geoffrey (2011)