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Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current
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1923 since deposited on 2021-10-19
Acq. date: 2026-01-09
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Views
1923 since deposited on 2021-10-19
Acq. date: 2026-01-09
Citations