Publication:
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current
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1924 since deposited on 2021-10-19
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Acq. date: 2026-08-06
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Statistics
Views
1924 since deposited on 2021-10-19
1last month
1last week
Acq. date: 2026-08-06
Citations