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Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current

Date

2011
Journal article
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dc.contributor.authorPham, Anh-Tuan
dc.contributor.authorZhao, Qing-Tai
dc.contributor.authorJungemann, Christoph
dc.contributor.authorMeinerzhagen, Bernd
dc.contributor.authorSoree, Bart
dc.contributor.authorPourtois, Geoffrey
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-19T17:18:26Z
dc.date.available2021-10-19T17:18:26Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19570
dc.source.beginpage64
dc.source.endpage71
dc.source.journalSolid-State Electronics
dc.source.volume65-66
dc.title

Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current

dc.typeJournal article
dspace.entity.typePublication
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