Browsing by author "de Jamblinne de Meux, Albert"
Now showing items 1-17 of 17
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A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow
Clark, William; Juncker, Aurelie; Paladugu, E.; Fried, David; Wilson, Chris; Pourtois, Geoffrey; Gallagher, Emily; de Jamblinne de Meux, Albert; Piumi, Daniele; Boemmels, Juergen; Tokei, Zsolt; Mocuta, Dan (2016) -
A new look on the properties of oxygen vacancies in a-IGZO
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2015) -
Ab-initio investigation of amorphous semiconductors
de Jamblinne de Meux, Albert (2018-03) -
Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2015) -
Defects in amorphous semicondutors: the case of amorphous-Indium-Gallium-Zinc-Oxide
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2018) -
Effect of high oxygen partial pressure on carrier transport mechanism in a-InGaZnO TFTs
Hung, Mai Phi; Chare, Christopher; Nag, Manoj; de Jamblinne de Meux, Albert; Genoe, Jan; Steudel, Soeren (2018) -
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2017) -
Flexible metal-oxide thin film transistor circuits for RFID and health patches
Heremans, Paul; Papadopoulos, Nikolas; de Jamblinne de Meux, Albert; Nag, Manoj; Steudel, Soeren; Rockele, Maarten; Gelinck, Gerwin; Tripathi, Ashutosh; Genoe, Jan; Myny, Kris (2016) -
Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
Fishchuk, Ivan; Kadashchuk, Andriy; Bhoolokam, Ajay; de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Gavrilyuk, M.M; Köhler, A.; Bässler, H.; Genoe, Jan; Heremans, Paul (2016) -
Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications
Heremans, Paul; Tripathi, Ashutosch; de Jamblinne de Meux, Albert; Smits, Edsger; Hou, Bo; Pourtois, Geoffrey; Gelinck, Gerwin (2016) -
Method to quantify the delocalization of the electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2018) -
On the origin of NBS and NBIS in amorphous IGZO
Heremans, Paul; de Jamblinne de Meux, Albert; Bhoolokam, Ajay; Pourtois, Geoffrey (2017) -
Origin of the apparent delocalization of the conduction band in high mobility amorphous semiconductors
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2017) -
Oxygen vacancies effects in aIGZO: Formation mechanisms, hysteresis, and negative bias stress effects
de Jamblinne de Meux, Albert; Bhoolokam, Ajay; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2017) -
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
Pourtois, Geoffrey; Dabral, Ashish; Sankaran, Kiroubanand; Magnus, Wim; Yu, Hao; de Jamblinne de Meux, Albert; Lu, Augustin; Clima, Sergiu; Stokbro, Kurt; Schaekers, Marc; Houssa, Michel; Collaert, Nadine; Horiguchi, Naoto (2017) -
Properties of oxide-semiconductor TFTs under mechanical strain for flexible electronics
Heremans, Paul; de Jamblinne de Meux, Albert; Tripathi, Ashutosh; Steudel, Soeren; Pourtois, Geoffrey; Gelinck, Gerwin (2015) -
Reevaluation of the origin of negative bias stress with and without light exposition in amorphous Indium-Gallium-Zinc-Oxide
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2016)