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Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
Publication:
Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
Date
2016
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Fishchuk, Ivan
;
Kadashchuk, Andriy
;
Bhoolokam, Ajay
;
de Jamblinne de Meux, Albert
;
Pourtois, Geoffrey
;
Gavrilyuk, M.M
;
Köhler, A.
;
Bässler, H.
;
Genoe, Jan
;
Heremans, Paul
Journal
Physical Review B
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1935
since deposited on 2021-10-23
411
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1935
since deposited on 2021-10-23
411
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations