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Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

dc.contributor.authorFishchuk, Ivan
dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorde Jamblinne de Meux, Albert
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorGavrilyuk, M.M
dc.contributor.authorKöhler, A.
dc.contributor.authorBässler, H.
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-23T10:50:18Z
dc.date.available2021-10-23T10:50:18Z
dc.date.issued2016
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26622
dc.sourceIIOimport
dc.titleInterplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
dc.typeJournal article
dc.contributor.imecauthorKadashchuk, Andriy
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage195204
dc.source.journalPhysical Review B
dc.source.issue19
dc.source.volume93
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.195204
imec.availabilityPublished - imec


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