Browsing by author "Pourtois, Geoffrey"
Now showing items 1-20 of 339
-
10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility
Tomczak, Yoann; Lin, Tsann; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Sankaran, Kiroubanand; Pourtois, Geoffrey; Tsvetanova, Diana; Souriau, Laurent; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
Khanam, Afrina; Vohra, Anurag; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried (2020-05) -
A density functional theory simulation of the formation of Ni-doped fullerenes by ion
Neyts, Erik; Maeyens, Axel; Pourtois, Geoffrey; Bogaerts, Annemie (2011) -
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
A first principles study of the oscillatory behavior of tunnel magnetoresitance: On the impact of magnetic and tunneling barrier layers and of the capping metals
Sankaran, Kiroubanand; Swerts, Johan; Couet, Sebastien; Furnemont, Arnaud; Stokbro, Kurt; Pourtois, Geoffrey (2016) -
A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition
Kaneda, Yukio; Nye, Rachel; Marques, Esteban; Armini, Silvia; Delabie, Annelies; van Setten, Michiel; Pourtois, Geoffrey (2023) -
A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009) -
A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow
Clark, William; Juncker, Aurelie; Paladugu, E.; Fried, David; Wilson, Chris; Pourtois, Geoffrey; Gallagher, Emily; de Jamblinne de Meux, Albert; Piumi, Daniele; Boemmels, Juergen; Tokei, Zsolt; Mocuta, Dan (2016) -
A new look on the properties of oxygen vacancies in a-IGZO
de Jamblinne de Meux, Albert; Pourtois, Geoffrey; Genoe, Jan; Heremans, Paul (2015) -
A scientific framework for establishing ultrafast molecular dynamic research in imec's AttoLab
Galleni, Laura; Sajjadian, Faegheh; Conard, Thierry; Pollentier, Ivan; Dorney, Kevin; Holzmeier, Fabian; Witting Larsen, Esben; Escudero, Daniel; Pourtois, Geoffrey; van Setten, Michiel; van der Heide, Paul; Petersen, John (2023) -
A scientific framework for establishing ultrafast molecular dynamic research in imec's AttoLab
Galleni, Laura; Sajjadian, Faegheh; Conard, Thierry; Pollentier, Ivan; Dorney, Kevin; Holzmeier, Fabian; Witting Larsen, Esben; Escudero, Daniel; Pourtois, Geoffrey; van Setten, Michiel; van der Heide, Paul; Petersen, John (2023-04-30) -
A simplified quantum mechanical model for the electron distribution in a Si nanowire
Magnus, Wim; Soree, Bart; Pourtois, Geoffrey; Compernolle, Steven (2007) -
A step towards a better understanding of silicon passivated (100) Ge p-channel
Pourtois, Geoffrey; Houssa, Michel; De Jaeger, Brice; Leys, Frederik; Kaczer, Ben; Martens, Koen; Caymax, Matty; Meuris, Marc; Groeseneken, Guido; Heyns, Marc (2007) -
A systematic study of various 2D materials in the light of defect formation and oxidation
Dabral, Ashish; Lu, A.K.A.; Chiappe, D.; Houssa, Michel; Pourtois, Geoffrey (2019) -
A theoretical study of the initial oxidation of the GaAs(001)-beta2(2x4) surface
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009) -
Ab initio analysis of defect formation and dopant activation in P and As co-doped Si
Nakazaki, Nobuya; Rosseel, Erik; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey (2019) -
Ab initio screening of metallic MAX ceramics for advanced interconnect applications
Sankaran, Kiroubanand; Moors, Kristof; Tokei, Zsolt; Adelmann, Christoph; Pourtois, Geoffrey (2021) -
Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework
Gaddemane, Gautam; Duflou, Rutger; Sankaran, Kiroubanand; Pourtois, Geoffrey; Houssa, Michel; Afzalian, Aryan (2021)