Browsing by author "Pourtois, Geoffrey"
Now showing items 21-40 of 339
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Adsorption of molecular oxygen on the reconstructed beta2(2x4)-GaAs(001) surface: a first-principles study
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Meuris, Marc; Heyns, Marc; Stesmans, Andre (2009) -
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Heyns, Marc; Brammertz, Guy; Caymax, Matty; Groeseneken, Guido; Hoffmann, Thomas Y.; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Verhulst, Anne; Wang, Gang (2010) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; van Bael, M.K.; Blomberg, T.; Pieereux, D.; Swerts, J.; Maes, J.W.; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2008) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; Van Bael, Marlies; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2009) -
Alternative metals for advanced interconnects
Adelmann, Christoph; Wen, Liang Gong; Peter, Antony; Siew, Yong Kong; Croes, Kristof; Swerts, Johan; Popovici, Mihaela Ioana; Sankaran, Kiroubanand; Pourtois, Geoffrey; Van Elshocht, Sven; Boemmels, Juergen; Tokei, Zsolt (2014) -
Alternative metals for advanced interconnects
Adelmann, Christoph; Wen, Liang Gong; Peter, Antony; Siew, Yong Kong; Dutta, Shibesh; Croes, Kristof; Swerts, Johan; Popovici, Mihaela Ioana; Sankaran, Kiroubanand; Pourtois, Geoffrey; Van Elshocht, Sven; Boemmels, Juergen; Tokei, Zsolt (2014-10) -
Alternative metals: from ab initio screening to calibrated narrow line models
Adelmann, Christoph; Sankaran, Kiroubanand; Dutta, Shibesh; Gupta, Anshul; Kundu, Shreya; Jamieson, Geraldine; Moors, Kristof; Pinna, Nicolo; Ciofi, Ivan; Van Elshocht, Sven; Boemmels, Juergen; Boccardi, Guillaume; Wilson, Chris; Pourtois, Geoffrey; Tokei, Zsolt (2018) -
Aluminium oxide atomic layer deposition on semiconductor substrates
Delabie, Annelies; Sioncke, Sonja; Rip, Jens; Van Elshocht, Sven; Pourtois, Geoffrey; Mueller, Matthias; Beckhoff, Burkhard; Pierloot, Kristine (2011) -
An atomistic insight of an engineering world
Pourtois, Geoffrey (2005) -
An atomistic view of a nanoelectronic world
Pourtois, Geoffrey; Clima, Sergiu; Sankaran, Kiroubanand; Mees, Maarten; De Gendt, Stefan; Heyns, Marc (2012) -
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces
Houssa, Michel; van den Broek, Bas; Scalise, Emilio; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2013) -
Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon
Eyben, Pierre; Clemente, Francesca; Vanstreels, Kris; Pourtois, Geoffrey; Sankaran, Kiroubanand; Clarysse, Trudo; Mody, Jay; Duriau, Edouard; Hantschel, Thomas; Vandervorst, Wilfried; Mylvaganam, Kausala; Zhang, Liangchi (2010) -
Analysis and modeling of the HV-SSRM nanocontact on silicon
Eyben, Pierre; Clemente, Francesca; Vanstreels, Kris; Pourtois, Geoffrey; Sankaran, Kiroubanand; Clarysse, Trudo; Mody, Jay; Duriau, Edouard; Hantschel, Thomas; Vandervorst, Wilfried; Mylvaganam, Kausala; Zhang, Liangchi (2009) -
Analytical and self-consistent quantum mechanical model for a JFET nanowire
Soree, Bart; Magnus, Wim; Pourtois, Geoffrey (2007) -
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
Soree, Bart; Magnus, Wim; Pourtois, Geoffrey (2008-02) -
Applications of Ni-based silicides to 45 nm CMOS and beyond
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Pawlak, Malgorzata; Van Dal, Mark; Akheyar, Amal; de Potter de ten Broeck, Muriel; Kottantharayil, Anil; Pourtois, Geoffrey; Lindsay, Richard; Maex, Karen (2004) -
Asymmetry and switching phenomenology in TiN\(Al2O3)\HfO2\Hf systems
Goux, Ludovic; Fantini, Andrea; Govoreanu, Bogdan; Kar, Gouri Sankar; Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Wouters, Dirk; Pourtois, Geoffrey; Jurczak, Gosia (2012-08) -
Atomic disorder - intrinsic source of variability in RRAM materials
Clima, Sergiu; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Atomic disorder as an intrinsic source of variability in filamentary RRAM devices – ab initio investigations
Clima, Sergiu; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Atomic imaging of nucleation of trimethylaluminium on clean H2O functionalized Ge(100) surfaces
Lee, Joon Sung; Kaufman-Osborn, Tobin; Melitz, Wilhelm; Lee, Sangyeob; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Pourtois, Geoffrey; Kummel, Andrew C. (2011)