Browsing by author "Van der Stricht, Wim"
Now showing items 1-20 of 56
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Accelerated aging of InGaN/GaN LED by electrical stressing
Jacobs, Koen; Cheyns, Jan; Van der Stricht, Wim; Moerman, Ingrid; Harrison, I. (1999) -
Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
Ruterana, P.; Nouet, G.; Van der Stricht, Wim; Moerman, Ingrid; Considine, L. (1998) -
Confocal microscopy and spectroscopy of InGaN epilayers on sapphire
O'Donnell, K. P.; Tobin, M. J.; Bayliss, S. C.; Van der Stricht, Wim (1999) -
Development of group III nitride technology for the realisation of light emitting diodes
Van der Stricht, Wim (1999-05) -
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
Duxbury, N.; Dawson, P.; Bangert, U.; Thrush, E. J.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999) -
Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD
Duxbury, N.; Dawson, P.; Bangert, U.; Thrush, E. J.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999) -
Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
Wu, Ming Fang; Vantomme, Andre; Hogg, S. M.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Yao, S.; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (2000) -
Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire
O'Donnell, K. P.; Middleton, P. G.; Trager-Cowan, C.; Young, C.; Bayliss, S. C.; Fletcher, I.; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet (1998) -
Epitaxial lateral overgrowth of GaN by OMVPE
Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Verstuyft, Steven; Caekebeke, Kristien; Van Daele, Peter; Considine, L.; Thrush, E. J. (1998) -
Epitaxial laterial overgrowth of GaN by OMVPE
Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Verstuyft, Steven; Caekebeke, Kristien; Van Daele, Peter; Considine, L.; Thrush, E. J. (1998) -
Exciton localization and the Stokes' shift in InGaN epilayers
Martin, R. W.; Middleton, P. G.; O'Donnell, K. P.; Van der Stricht, Wim (1999) -
Getter stabilized zeolite materials for specialty GAS purification
Vergani, G.; Succi, M.; Thrush, E. J.; Crawley, J. A.; Van der Stricht, Wim; Torres, P.; Kroll, U. (1997) -
Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices
Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Crawley, J. A.; Thrush, E. J. (1996) -
Growth and in situ monitoring of GaN using IR interference effects
Considine, L.; Thrush, E. J.; Crawley, J. A.; Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Park, G. H.; Hwang, S. J.; Song, J. J. (1998) -
Hexagonal growth hillocks in GaN epilayers
Middleton, P. G.; Trager-Cowan, C.; Mohammed, A.; O'Donnell, K. P.; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet (1997) -
Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire
Mohammed, A.; Trager-Cowan, C.; Middleton, P. G.; O'Donnell, K. P.; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet (1997) -
High indium content InGaN films and quantum wells
Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Demeester, Piet; Considine, L.; Thrush, E. J.; Crawley, J. A.; Ruterana, P. (1998) -
Indium segregation in InGaN quantum-well structures
Duxbury, N.; Bangert, U.; Dawson, P.; Thrush, E. J.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (2000)