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Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
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Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
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Date
1999
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wu, Ming Fang
;
Vantomme, Andre
;
Hogg, S. M.
;
Langouche, G.
;
Van der Stricht, Wim
;
Jacobs, Koen
;
Moerman, Ingrid
Journal
Appl. Phys. Lett.
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2017
since deposited on 2021-10-14
1
last month
Acq. date: 2026-01-10
Citations
Metrics
Views
2017
since deposited on 2021-10-14
1
last month
Acq. date: 2026-01-10
Citations