Browsing by author "Jiang, Xiaoqiang"
Now showing items 1-5 of 5
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A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Atomic layer deposition of novel interface layers on III-V channel devices
Tang, Fu; Jiang, Xiaoqiang; Xie, Qi; Givens, Michael; Maes, Jan; Sioncke, Sonja; Tsvetan, Ivanov; Nyns, Laura; Lin, Dennis; Collaert, Nadine (2017) -
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Xie, Qi; Calka, Pauline; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2017) -
Novel gate stack engineering for high mobility Ge nFETs
Arimura, Hiroaki; Cott, Daire; Loo, Roger; Wostyn, Kurt; Boccardi, Guillaume; Franco, Jacopo; Sioncke, Sonja; Xie, Qi; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Chiu, Eddie; Mitard, Jerome; Mocuta, Dan; Collaert, Nadine (2018) -
Si-passivated Ge nMOS gate stack with low DIT and dipole-induced superior PBTI reliability using 3D-compatible ALD caps and high-pressure anneal
Arimura, Hiroaki; Cott, Daire; Loo, Roger; Vanherle, Wendy; Xie, Qi; Tang, Fu; Jiang, Xiaoqiang; Franco, Jacopo; Sioncke, Sonja; Ragnarsson, Lars-Ake; Chiu, Eddie; Lu, Xiaowan; Geypen, Jef; Bender, Hugo; Maes, Jan; Givens, Michael; Sibaja-Hernandez, Arturo; Wostyn, Kurt; Boccardi, Guillaume; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan (2016)