Browsing by author "Wang, W.-E."
Now showing items 1-2 of 2
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A new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
Rakshit, T.; Obradovic, B.; Wang, W.-E.; Kim, Weon Hong; Shin, Keo Myoung; Baek, Seongcheol; Lee, Sung Woo; Kim, S.-H.; Lee, J.-M.; Kim, Daeyong; Hoover, A.; Song, W.-B.; Cantoro, M.; Heo, Y.-C.; Rooyackers, Rita; Ardila, S.C.; Vais, Abhitosh; Lin, Dennis; Collaert, Nadine; Rodder, M.S. (2017) -
Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts
Vincent, Benjamin; Firrincieli, Andrea; Waldron, Niamh; Wang, W.-E.; Franquet, Alexis; Douhard, Bastien; Bender, Hugo; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty (2011)