Browsing by author "Rantamaki, R."
Now showing items 1-3 of 3
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Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography
McNally, P. J.; Tuomi, T.; Lowney, D.; Jacobs, Koen; Danilewsky, A. N.; Rantamaki, R.; O'Hare, M.; Considine, L. (2001) -
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy
McNally, P. J.; Curley, J. W.; Bolt, M.; Reader, A.; Tuomi, T.; Rantamaki, R.; Danilewsky, A. N.; De Wolf, Ingrid (1999) -
Synchrotron x-ray topography studies of epitaxial laterial overgrowth of GaN on sapphire
McNally, P. J.; O'Hare, M.; Tuomi, T.; Rantamaki, R.; Jacobs, Koen; Considine, L.; Danilewsky, A. N. (1999)